Injection/Ejection of Pulses in Ultrafast Amplifier Systems

Products in this application

Wavelength 400-1250 nm
Clear aperture up to 20 mm
Peak isolation up to 60 dB
Transmission up to 92%
Damage threshold up to 5 J/cm^2
Possible operating wavelength range 200-2700 nm
Max. output rep. rate up to 100 kHz
Rise time 7 ns
Gate open time (adjustable) from 20 ns to 10 us
Contrast ratio >1000:1

Latest News

The TiF-100ST-F18-AU femtosecond high-power titanium-sapphire oscillator

Ti:S oscillator with up to 3 W output power at 100 fs

We have ramped up the maximum available output power for the TiF-100 series to more than 3 Watts at 800 nm, 100 fs, 80 MHz. The tuning range has also been extended to 720-950 nm, while an optional modification that covers 850-1040 nm is also avaiable. The system features a high-power low-noise integrated DPSS laser […]

TiF-100ST-F6 femtosecond Ti:S oscillator with Frep locking for multiphoton microscopy at CANDLE, Armenia

The TiF-100ST-F6 femtosecond Ti:S oscillator with a built-in pump laser, also equipped with the ALock PLL electronics unit for pulse repetition rate locking to an external RF source has been installed at the Synchrotron Research Institute’s CANDLE facility in Armenia. The setup has been developed and commercialized during the joint Russia-Armenia project supported by FASIE (Innovation […]

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