Products in this application

Wavelength 1030...1053 nm
Pulse duration <200 fs...300 ps
Average power 50 mW...20 W
Repetition rate 70±10 MHz
Wavelength 1030 nm (1040, 1050 on request)
Average power >40 W
Pulse energy >40 uJ
Repetition rate up to 75 MHz
Pulse duraiton <200 fs
Wavelength tuning range 715-1040 nm
Pulse duration <100 fs
Average power >3 W
Repetition rate 80 MHz
Wavelength 1050 nm
Pulse duration 70...150 fs
Average power up to 7 W
Repetition rate 80 MHz
Wavelength 525 and 1050 nm
Average power >3 W/ >7 W
Pulse duration <100 fs
Pulse repetition rate 80 MHz
Central wavelength 800±20 nm (fixed)
Pulse energy from 50 uJ to 40 mJ
Pulse repetition rate up to 10 kHz
Pulse duration from 30 to 120 fs
Input frequency signal up to 2.8 GHz
PID bandwidth up to 2 MHz
High-voltage amplifier for PZT up to 50 W
PZT modulation bandwidth up to 200 kHz

Latest News

The TiF-100ST-F18-AU femtosecond high-power titanium-sapphire oscillator

Ti:S oscillator with up to 3 W output power at 100 fs

We have ramped up the maximum available output power for the TiF-100 series to more than 3 Watts at 800 nm, 100 fs, 80 MHz. The tuning range has also been extended to 720-950 nm, while an optional modification that covers 850-1040 nm is also avaiable. The system features a high-power low-noise integrated DPSS laser […]

TiF-100ST-F6 femtosecond Ti:S oscillator with Frep locking for multiphoton microscopy at CANDLE, Armenia

The TiF-100ST-F6 femtosecond Ti:S oscillator with a built-in pump laser, also equipped with the ALock PLL electronics unit for pulse repetition rate locking to an external RF source has been installed at the Synchrotron Research Institute’s CANDLE facility in Armenia. The setup has been developed and commercialized during the joint Russia-Armenia project supported by FASIE (Innovation […]

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