Generation and Detection of Terahertz (THz) Radiation
Products in this application
| Wavelength | 1030...1053 nm |
| Pulse duration | <200 fs...300 ps |
| Average power | 50 mW...20 W |
| Repetition rate | 70±10 MHz |
| Pulse duration | 50 fs...5 ps |
| Wavelength | 1560±10 nm / 780±20 nm |
| Output power | >200 mW |
| Repetition rate | 30-100 MHz (fixed) |
| Output | FC/APC or free-space |
| Wavelength | 1560±10 nm |
| Pulse duration | 50 fs to 5 ps |
| Average power | 10 mW to 5 W |
| Repetition rate | 65...100 MHz (fixed) |
| Wavelength | 780 and 1560 nm |
| Average power | >200/440 mW |
| Pulse duration | <100 fs |
| Repetition rate | 65 MHz |
| Wavelength range | 730-970 nm |
| Pulse duration | <50 fs |
| Average power | >1 W |
| Repetition rate | 80 MHz |
| Wavelength tuning range | 715-990 nm |
| Pulse duration | <100 fs |
| Average power | >2.1 W |
| Repetition rate | 80 MHz |
| Wavelength | 1050 nm |
| Pulse duration | 70...150 fs |
| Average power | up to 12 W |
| Repetition rate | 80 MHz |
| Wavelength | 525 and 1050 nm |
| Average power | >6 W/ >12 W |
| Pulse duration | <100 fs |
| Pulse repetition rate | 80 MHz |
| Wavelength | 1050 / 525 / 800 nm |
| Average power | 1 W / 300 mW / 300 mW |
| Pulse duration | 200 / 200 / 100 fs |
| Repetition rate | 80 MHz |
| Jitter between channels | <1 fs |
| Wavelength | 1240 nm |
| Pulse energy | from 50 uJ to 30 mJ |
| Pulse repetition rate | up to 1 kHz |
| Pulse duration | <120 fs |
| Pulse duration | <85 fs |
| Wavelength | 1240 nm |
| Peak power | up to 2 TW |
| Pulse repetition rate | 10 Hz |
| Operating wavelengths | 800 and 515/1030 nm |
| Energy efficiency | up ot 40% |
| Compression ratio |
up to 15 |
| Output pulse duration (at 35 fs, 800 nm input) | <6 fs |
| Input frequency signal | up to 2.8 GHz |
| PID bandwidth | up to 2 MHz |
| High-voltage amplifier for PZT | up to 50 W |
| PZT modulation bandwidth | up to 200 kHz |
| Modulation frequency | 6-6300 Hz |
| Accuracy of frequency setting | 1 Hz |
| Spectral range | 0.5-2.5 THz |
| THz pulse duration | <1 ps |
| THz pulse energy | up to 1 uJ |
| Focused THz field strength | up to 1 MV/cm |
Latest News
Ti:S oscillator with up to 3 W output power at 100 fs
We have ramped up the maximum available output power for the TiF-100 series to more than 3 Watts at 800 nm, 100 fs, 80 MHz. The tuning range has also been extended to 720-950 nm, while an optional modification that covers 850-1040 nm is also available. The system features a high-power low-noise integrated DPSS laser […]
TiF-100ST-F6 femtosecond Ti:S oscillator with Frep locking for multiphoton microscopy at CANDLE, Armenia
The TiF-100ST-F6 femtosecond Ti:S oscillator with a built-in pump laser, also equipped with the ALock PLL electronics unit for pulse repetition rate locking to an external RF source has been installed at the Synchrotron Research Institute’s CANDLE facility in Armenia. The setup has been developed and commercialized during the joint Russia-Armenia project supported by FASIE (Innovation […]