Generation of High-Energy THz Pulses Using Organic Crystals
Products in this application
Wavelength | 1240 nm |
Pulse energy | from 50 uJ to 30 mJ |
Pulse repetition rate | up to 1 kHz |
Pulse duration | <120 fs |
Pulse duration | <85 fs |
Wavelength | 1240 nm |
Peak power | up to 2 TW |
Pulse repetition rate | 10 Hz |
Input wavelengths | 800, 1030 or 1240 nm |
Maximum input pulse energy | up to 100 mJ |
Conversion efficiency | up to 30% |
Possible output wavelengths (for various input sources) |
870, 1050, 1180, 1200, 1430, 1890, 1530, 1970, 2600 nm |
Input frequency signal | up to 2.8 GHz |
PID bandwidth | up to 2 MHz |
High-voltage amplifier for PZT | up to 50 W |
PZT modulation bandwidth | up to 200 kHz |
Latest News
28.07.2020
Ti:S oscillator with up to 3 W output power at 100 fs
We have ramped up the maximum available output power for the TiF-100 series to more than 3 Watts at 800 nm, 100 fs, 80 MHz. The tuning range has also been extended to 720-950 nm, while an optional modification that covers 850-1040 nm is also available. The system features a high-power low-noise integrated DPSS laser […]
02.09.2019
TiF-100ST-F6 femtosecond Ti:S oscillator with Frep locking for multiphoton microscopy at CANDLE, Armenia
The TiF-100ST-F6 femtosecond Ti:S oscillator with a built-in pump laser, also equipped with the ALock PLL electronics unit for pulse repetition rate locking to an external RF source has been installed at the Synchrotron Research Institute’s CANDLE facility in Armenia. The setup has been developed and commercialized during the joint Russia-Armenia project supported by FASIE (Innovation […]