Front-End for TW- and PW-Сlass Femtosecond Amplifiers
Products in this application
| Wavelength | 1030 nm (1040, 1050 on request) |
| Average power | >40 W |
| Pulse energy | >40 uJ |
| Repetition rate | up to 75 MHz |
| Pulse duraiton | <200 fs |
| Tuning range | 740-970 nm |
| Pulse duration | <20-100 fs |
| Average power | up to 1 W |
| Repetition rate | 90±10 MHz |
| Wavelength tuning range | 750-860 nm |
| Pulse duration | <12...50 fs |
| Average power | 230...1300 mW |
| Repetition rate | 80 MHz |
| Wavelength | 1050 nm |
| Pulse duration | 70...150 fs |
| Average power | up to 12 W |
| Repetition rate | 80 MHz |
| Wavelength | 525 and 1050 nm |
| Average power | >6 W/ >12 W |
| Pulse duration | <100 fs |
| Pulse repetition rate | 80 MHz |
| Wavelength | 1050 / 525 / 800 nm |
| Average power | 1 W / 300 mW / 300 mW |
| Pulse duration | 200 / 200 / 100 fs |
| Repetition rate | 80 MHz |
| Jitter between channels | <1 fs |
| Central wavelength | 800±20 nm (fixed) |
| Pulse energy | from 50 uJ to 40 mJ |
| Pulse repetition rate | up to 10 kHz |
| Pulse duration | from 30 to 120 fs |
| Average power | up to 20 W |
| Central wavelength | 1030 nm |
| Pulse energy | up to 2 mJ |
| Repetition rate | up to 1 MHz |
| Pulse duration | <270 fs |
| Wavelength | 1240 nm |
| Pulse energy | from 50 uJ to 30 mJ |
| Pulse repetition rate | up to 1 kHz |
| Pulse duration | <120 fs |
| Pulse duration | <35 fs |
| Wavelength (fixed) | 800±15 nm |
| Peak power | up to 15 TW |
| Repetition rate | 10 Hz |
| Pulse energy | >550 mJ |
| Pulse duration | <85 fs |
| Wavelength | 1240 nm |
| Peak power | up to 2 TW |
| Pulse repetition rate | 10 Hz |
| Input frequency signal | up to 2.8 GHz |
| PID bandwidth | up to 2 MHz |
| High-voltage amplifier for PZT | up to 50 W |
| PZT modulation bandwidth | up to 200 kHz |
Latest News
Ti:S oscillator with up to 3 W output power at 100 fs
We have ramped up the maximum available output power for the TiF-100 series to more than 3 Watts at 800 nm, 100 fs, 80 MHz. The tuning range has also been extended to 720-950 nm, while an optional modification that covers 850-1040 nm is also available. The system features a high-power low-noise integrated DPSS laser […]
TiF-100ST-F6 femtosecond Ti:S oscillator with Frep locking for multiphoton microscopy at CANDLE, Armenia
The TiF-100ST-F6 femtosecond Ti:S oscillator with a built-in pump laser, also equipped with the ALock PLL electronics unit for pulse repetition rate locking to an external RF source has been installed at the Synchrotron Research Institute’s CANDLE facility in Armenia. The setup has been developed and commercialized during the joint Russia-Armenia project supported by FASIE (Innovation […]