Semiconductor Device Characterization
Products in this application
| Pulse duration | 50 fs...5 ps |
| Wavelength | 1560±10 nm / 780±20 nm |
| Output power | >200 mW |
| Repetition rate | 30-100 MHz (fixed) |
| Output | FC/APC or free-space |
| Wavelength | 1560±10 nm |
| Pulse duration | 50 fs to 5 ps |
| Average power | 10 mW to 5 W |
| Repetition rate | 65...100 MHz (fixed) |
| Wavelength | 780 and 1560 nm |
| Average power | >200/440 mW |
| Pulse duration | <100 fs |
| Repetition rate | 65 MHz |
| Spectral coverage | 1100-2000 nm |
| Average output power | >150 mW |
| Repetition rate | 50...70 MHz |
| Tuning range | 740-970 nm |
| Pulse duration | <20-100 fs |
| Average power | up to 1 W |
| Repetition rate | 90±10 MHz |
| Wavelength tuning range | 750-860 nm |
| Pulse duration | <12...50 fs |
| Average power | 230...1300 mW |
| Repetition rate | 80 MHz |
| Wavelength range | 730-970 nm |
| Pulse duration | <50 fs |
| Average power | >1 W |
| Repetition rate | 80 MHz |
| Wavelength tuning range | 715-990 nm |
| Pulse duration | <100 fs |
| Average power | >2.1 W |
| Repetition rate | 80 MHz |
| Wavelength | 1050 nm |
| Pulse duration | 70...150 fs |
| Average power | up to 12 W |
| Repetition rate | 80 MHz |
| Wavelength | 525 and 1050 nm |
| Average power | >6 W/ >12 W |
| Pulse duration | <100 fs |
| Pulse repetition rate | 80 MHz |
| Pulse duration | 35...140 fs |
| Tuning range | 1230-1270 nm |
| Output power | up to 800 mW |
| Pulse energy | up to 20 nJ |
| Pulse repetition rate | 30/96 MHz |
| Tuning range | 230-4750 nm |
| Pulse duration | 130...250 fs |
| Average optical power | up to 2 W |
| Repetition rate | 80 MHz |
| Central wavelength | 800±20 nm (fixed) |
| Pulse energy | from 50 uJ to 40 mJ |
| Pulse repetition rate | up to 10 kHz |
| Pulse duration | from 30 to 120 fs |
| Pulse duration | <35 fs |
| Wavelength (fixed) | 800±15 nm |
| Peak power | up to 15 TW |
| Repetition rate | 10 Hz |
| Pulse energy | >550 mJ |
Latest News
Ti:S oscillator with up to 3 W output power at 100 fs
We have ramped up the maximum available output power for the TiF-100 series to more than 3 Watts at 800 nm, 100 fs, 80 MHz. The tuning range has also been extended to 720-950 nm, while an optional modification that covers 850-1040 nm is also available. The system features a high-power low-noise integrated DPSS laser […]
TiF-100ST-F6 femtosecond Ti:S oscillator with Frep locking for multiphoton microscopy at CANDLE, Armenia
The TiF-100ST-F6 femtosecond Ti:S oscillator with a built-in pump laser, also equipped with the ALock PLL electronics unit for pulse repetition rate locking to an external RF source has been installed at the Synchrotron Research Institute’s CANDLE facility in Armenia. The setup has been developed and commercialized during the joint Russia-Armenia project supported by FASIE (Innovation […]