Amplifier Design
Products in this application
Input wavelengths | 800, 1030 or 1240 nm |
Maximum input pulse energy | up to 100 mJ |
Conversion efficiency | up to 30% |
Possible output wavelengths (for various input sources) |
870, 1050, 1180, 1200, 1430, 1890, 1530, 1970, 2600 nm |
Input wavelength range | 450 nm - 11 um |
Input pulse duration range | 50 fs - 250 ps |
Minimum input rep. rate | from 10 Hz |
Sensitivity | from 1 W^2 |
Wavelength range | 400-2200 nm |
Pulse duration range | 5 fs...20 ps |
Repetition rate | single-shot...150 MHz |
Sensitivity | 1 uJ in single-shot mode |
Input spectral range | 550-1100 nm |
Input pulse duration range | 5-320 fs |
Input sensitivity | 100 mW at 100 MHz; 1 uJ in single-shot mode |
Input pulse repetition rate | any |
Possible input wavelength range | 700-1500 nm |
Scan range | up to 4 ns |
Dynamic range | 10^10 |
Sensitivity | 50-100 uJ |
Operating wavelength | 250...2000 nm |
Transmission | >90% |
Dynamic range | >10^2 |
Damage threshold | up to 10 J/cm^2 |
Clear aperture | up to 15 mm |
Wavelength | 400-1250 nm |
Clear aperture | up to 20 mm |
Peak isolation | up to 60 dB |
Transmission | up to 92% |
Damage threshold | up to 5 J/cm^2 |
Input wavelength range | 750-1600 nm |
SH output wavelength | 375-800 nm |
TH output wavelength | 250-533 nm |
Conversion efficiency | SH: 20-50%; TH: 3-15% |
Input wavelength range | 820-1600 nm |
SH output wavelength | 410-800 nm |
FH output wavelength | 205-400 nm |
Conversion efficiency | SH: 20-50%; FH: 3-10% |
Input frequency signal | up to 2.8 GHz |
PID bandwidth | up to 2 MHz |
High-voltage amplifier for PZT | up to 50 W |
PZT modulation bandwidth | up to 200 kHz |
Possible operating wavelength range | 200...2700 nm |
Max. output rep. rate | up to 1 MHz |
Rise time | down to 700 ps |
Clear aperture | up to 20 mm |
Contrast ratio | >1500:1 |
Possible operating wavelength range | 200-2700 nm |
Max. output rep. rate | up to 100 kHz |
Rise time | 7 ns |
Gate open time (adjustable) | from 20 ns to 10 us |
Contrast ratio | >1000:1 |
Latest News
28.07.2020
Ti:S oscillator with up to 3 W output power at 100 fs
We have ramped up the maximum available output power for the TiF-100 series to more than 3 Watts at 800 nm, 100 fs, 80 MHz. The tuning range has also been extended to 720-950 nm, while an optional modification that covers 850-1040 nm is also available. The system features a high-power low-noise integrated DPSS laser […]
02.09.2019
TiF-100ST-F6 femtosecond Ti:S oscillator with Frep locking for multiphoton microscopy at CANDLE, Armenia
The TiF-100ST-F6 femtosecond Ti:S oscillator with a built-in pump laser, also equipped with the ALock PLL electronics unit for pulse repetition rate locking to an external RF source has been installed at the Synchrotron Research Institute’s CANDLE facility in Armenia. The setup has been developed and commercialized during the joint Russia-Armenia project supported by FASIE (Innovation […]