OEM Integration
Products in this application
Wavelength | 1030...1053 nm |
Pulse duration | <200 fs...300 ps |
Average power | 50 mW...20 W |
Repetition rate | 70±10 MHz |
Wavelength | 1030 nm (1040, 1050 on request) |
Average power | >40 W |
Pulse energy | >40 uJ |
Repetition rate | up to 75 MHz |
Pulse duraiton | <200 fs |
Pulse duration | 50 fs...5 ps |
Wavelength | 1560±10 nm / 780±20 nm |
Output power | >200 mW |
Repetition rate | 30-100 MHz (fixed) |
Output | FC/APC or free-space |
Wavelength | 1560±10 nm |
Pulse duration | 50 fs to 5 ps |
Average power | 10 mW to 5 W |
Repetition rate | 65...100 MHz (fixed) |
Wavelength | 780 and 1560 nm |
Average power | >200/440 mW |
Pulse duration | <100 fs |
Repetition rate | 65 MHz |
Wavelength | 1050 nm |
Pulse duration | 70...150 fs |
Average power | up to 12 W |
Repetition rate | 80 MHz |
Wavelength | 525 and 1050 nm |
Average power | >6 W/ >12 W |
Pulse duration | <100 fs |
Pulse repetition rate | 80 MHz |
Tuning range | 720-980 nm / 1240-1270 nm |
Pulse duration | 15...100 fs |
Average output power | up to 1 W at 800 nm / up to 400 mW at 1250 nm |
Repetition rate | 20...100 MHz |
Average power | up to 20 W |
Central wavelength | 1030 nm |
Pulse energy | up to 2 mJ |
Repetition rate | up to 1 MHz |
Pulse duration | <270 fs |
Operating wavelength | 250...2000 nm |
Transmission | >90% |
Dynamic range | >10^2 |
Damage threshold | up to 10 J/cm^2 |
Clear aperture | up to 15 mm |
Wavelength | 400-1250 nm |
Clear aperture | up to 20 mm |
Peak isolation | up to 60 dB |
Transmission | up to 92% |
Damage threshold | up to 5 J/cm^2 |
Input wavelength range | 750-1600 nm |
SH output wavelength | 375-800 nm |
TH output wavelength | 250-533 nm |
Conversion efficiency | SH: 20-50%; TH: 3-15% |
Input wavelength range | 820-1600 nm |
SH output wavelength | 410-800 nm |
FH output wavelength | 205-400 nm |
Conversion efficiency | SH: 20-50%; FH: 3-10% |
Input wavelength range | 780-1600 nm |
SH output wavelength | 390-800 nm |
TH output wavelength | 260-533 nm |
FH output wavelength | 195-400 nm |
Conversion efficiency | SH: 30-60%; TH: 5-10%; FH: 1-10% |
Input frequency signal | up to 2.8 GHz |
PID bandwidth | up to 2 MHz |
High-voltage amplifier for PZT | up to 50 W |
PZT modulation bandwidth | up to 200 kHz |
Possible operating wavelength range | 200...2700 nm |
Max. output rep. rate | up to 1 MHz |
Rise time | down to 700 ps |
Clear aperture | up to 20 mm |
Contrast ratio | >1500:1 |
Possible operating wavelength range | 200-2700 nm |
Max. output rep. rate | up to 100 kHz |
Rise time | 7 ns |
Gate open time (adjustable) | from 20 ns to 10 us |
Contrast ratio | >1000:1 |
Latest News
28.07.2020
Ti:S oscillator with up to 3 W output power at 100 fs
We have ramped up the maximum available output power for the TiF-100 series to more than 3 Watts at 800 nm, 100 fs, 80 MHz. The tuning range has also been extended to 720-950 nm, while an optional modification that covers 850-1040 nm is also available. The system features a high-power low-noise integrated DPSS laser […]
02.09.2019
TiF-100ST-F6 femtosecond Ti:S oscillator with Frep locking for multiphoton microscopy at CANDLE, Armenia
The TiF-100ST-F6 femtosecond Ti:S oscillator with a built-in pump laser, also equipped with the ALock PLL electronics unit for pulse repetition rate locking to an external RF source has been installed at the Synchrotron Research Institute’s CANDLE facility in Armenia. The setup has been developed and commercialized during the joint Russia-Armenia project supported by FASIE (Innovation […]